▎ 摘　　要

A semi-classical and a semi-quantum current transport model for p-i-n n-type armchair graphene nanoribbon tunnel field effect transistor (TFET) are studied analytically. The results are compared with the numerical quantum transport simulation method using an atomistic Schrodinger-Poisson solver within the non-equilibrium Green function (NEGF) formalism. The channel length and width are 20 and 4.9 nm and a-GNR band gap is 0.289 eV. Current ratio I-ON/I-OFF at 0.1 V supply voltage is calculated as follows: 122, 16.3 and 116 with a subthreshold slopes 26, 69 and 27.4 mV/decade from semi-classical, semi-quantum and NEGF simulation, respectively. Performance of a-GNR TFET is also studied analytically and numerically considering a-GNR width variation. Voltage transfer characteristics of a-GNR TFET inverter are computed for 0.1 V and 0.2 supply voltages using three current transport models which are in close agreement.