• 文献标题:   Effects of graphene defect on electronic structures of its interface with organic semiconductor
  • 文献类型:   Article
  • 作  者:   YANG QD, DOU WD, WANG CD, MO HW, LO MF, YUEN MF, NG TW, ZHANG WJ, TSANG SW, LEE CS
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   City Univ Hong Kong
  • 被引频次:   5
  • DOI:   10.1063/1.4916736
  • 出版年:   2015

▎ 摘  要

Electronic structures of copper hexadecafluorophthalocyanine (F16CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H-2 plasma treatment. By increasing the treatment time of H2 plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F16CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces. (C) 2015 AIP Publishing LLC.