▎ 摘　　要

In-situ synchrotron-based photoemission spectroscopy, low-temperature scanning tunneling microscopy and Raman spectroscopy are used to investigate the interface properties of graphene on both the (0001) and (000 (1) over bar) 6H-SiC (Si-and C-terminated surfaces). We clearly observe the upward band-bending upon the formation of interfacial graphene, which depends on the surface polarity of the underlying SiC substrate, i.e., a weak upward band bending by 0.4 eV forms on the Si-terminated 6H-SiC(0001); while a much larger upward band bending by 1.3 eV appears on the C-terminated 6H-SiC(000 (1) over bar). (C) 2010 The Japan Society of Applied Physics