▎ 摘　　要

A cheap aromatic precursor (1,10-phenanthroline) with heteroatom and planar-structure was designed to synthesize large-scale, continuous and mostly single-layer nitrogen-doped graphene (NG) films by one-step chemical vapor deposition method. The NG sheets can be obtained even at 600 degrees C. The results indicated that the content and type of doped N are intensely relied on the growth temperature. Our fabrication approach provides an economic synthetic route and potentially promotes the practical application of graphene-based materials. (C) 2018 Elsevier B.V. All rights reserved.