▎ 摘　　要

In this paper, we report on the surface patterning of punctual defects onto graphene films grown on 6H-SiC(0001) substrates, using a finely focused gallium (Ga+) ion beam. We present organized arrays of nano-defects, designed using ion doses in the range of 10-1 x 10(6) Ga+ ions/dot. Using Conductive Atomic Force Microscopy (CAFM) and Raman spectroscopy we evidence the strong resilience of graphene towards ion irradiation and characterize the morphology and the electronic properties of the FIB-induced local nano-defects. We show that punctual ion irradiation and dose control allow progressive amorphization of graphene leading to the promising perspective of graphene-based tunable templates. (C) 2012 Published by Elsevier B.V.