• 文献标题:   Semiconductor-metal and metal-semiconductor transitions in twisting graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   XU N, HUANG BL, LI JF, WANG BL
  • 作者关键词:   graphene nanoribbon, transport propertie
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Yancheng Inst Technol
  • 被引频次:   3
  • DOI:   10.1016/j.ssc.2014.10.015
  • 出版年:   2015

▎ 摘  要

The electronic structure and transport properties of twisting graphene nanoribbons (TGNRs) are systematically investigated using the tight-binding model and the non-equilibrium Green's function method. We show that the energy gap and conductance around the Fermi energy can be reversibly modulated. Armchair TGNRs (ATGNRs) can be either metallic or semiconducting depending on the widths and the twist angles of the GNRs. Semiconductor-metal and metal-semiconductor transitions are observed in ATGNRs for N=3i + 1 (where i is an integer and N is the number of atoms along the width of the nanoribbon) and N= 3i + 2, respectively. Narrow ATGNRs are semiconductors for N = 3i, whereas zigzag TGNRs (ZTGNRs) are metallic regardless of the width and distortion of the GNRs. (C) 2014 Elsevier Ltd. All rights reserved.