▎ 摘　　要

Vertical few-layer graphene (V-FLG) sheet is expected to be a high field emitter due to its electrical properties and open surface with sharp edges. However, the complicated and tedious preparation method using gaseous carbon-containing precursor limited the universal application of V-FLG. This paper reports a novel, simple, and green method to prepare vertical nitrogen-doped few-layer graphene (V-NFLG) on the metal surfaces that exhibit excellent field emission properties. The V-NFLG was grown on a Cu substrate using C-60 as a precursor with the help of a nitrogen microwave plasma. Growth and doping mechanisms for the few-layer graphene are suggested based on microwave plasma emission spectra of C-60/nitrogen. The as-prepared NFLG exhibits remarkable field emission performance, with a high field enhancement factor (7430 at the high field), a low turn-on field (1.45 V/mu m at 10 mu A/cm(2)), and high stability (within +/- 4%), showing its great potential for field emission applications.