▎ 摘　　要

Graphene planar silicon heterojunction solar cells were investigated using 2D physics-based TCAD simulation. A planar structure consisting of graphene layer as the hole transport material, and n-type silicon as substrate is simulated. Process modeling has been carried out especially for highly boron diffusion. Using this model, the effect of the highly doped surface inverse region located as 0.08, 0.22, 0.35 mu m on the photovoltaic performance has been studied. The obtained J-V characteristic is analyzed to study effects of the inverse region depth and doping concentration on Schottky junction modification. The proposed design proves to be highly efficient in 0.2 h annealing, which provides a new platform to further enhance the performance of graphene planar solar cell.