▎ 摘　　要

We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 x 10(11)-1 x 10(12) cm(-2), and the maximum mobility of electrons approached 6000 cm(2)/(V center dot s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at D cent = 300 De in the absence of intercalated hydrogen.