▎ 摘　　要

In this work, we present the Dual-Gate Graphene Nano Ribbon Field Effect Transistor (DG-GNRFET) under local uniaxial strain in source and drain regions as a device suitable for switching applications. Our investigations are based on the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). We show a high on-current and on-off ratio which can be obtained using the combination of techniques such as applying uniaxial strain to the portion of channel/source regions and the gate overlap. We followed an optimization process to find the best performance of the device. Finally, the proposed device shows a higher on-current and on-off ratio becomes about 100 times greater than of the unstrained device. (C) 2015 Elsevier B.V. All rights reserved.