▎ 摘　　要

Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices.