▎ 摘　　要

Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.