1. 平台首页
  2. 国际论文信息
  • 文献标题:   Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures
  • 文献类型:   Article
  • 作　　者:   KHANIN YN, VDOVIN EE, MISHCHENKO A, NOVOSELOV KS
  • 作者关键词:   tunneling, magnetic tunneling, van der waals heterosystem, graphene
  • 出版物名称:   SEMICONDUCTORS
  • ISSN:   1063-7826 EI 1090-6479
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   1
  • DOI:   10.1134/S1063782619080104
  • 出版年:   2019

▎ 摘　　要

Tunneling and magnetic tunneling are investigated in graphene/h-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h-BN barrier, and current caused by their presence is generated.