• 文献标题:   Tunable photoresponse with small drain voltage in few-layer graphene-WSe2 heterostructures
  • 文献类型:   Article
  • 作  者:   LUO W, QIN SQ, LONG MS, LIU EF, FU YJ, ZHOU W, MIAO F, ZHANG S, ZHANG RY, ZHANG XA
  • 作者关键词:   graphene, transitionmetal dichalcogenide, heterostructure, photoresponse, drain voltage
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601 EI 1873-2429
  • 通讯作者地址:   Natl Univ Def Technol
  • 被引频次:   3
  • DOI:   10.1016/j.physleta.2016.05.060
  • 出版年:   2016

▎ 摘  要

Two-dimensional layered heterostructures show great potential to develop optoelectronic systems. Here, we have investigated the photoresponse properties of two contact interfaces in few-layer graphene-WSe2 heterostructures. The photoresponsivity of graphene-WSe2 contact interface is about 2.67 mAjW, and the photoresponsivity of WSe2-metal contact interface is about 0.2 mA/W. Photocurrent images show that the two contact interfaces behave differently under drain voltage from 0.5 V to 0.5 V. The photoresponsivity of one contact interface increases with the drain voltage, and that of the other decreases with the drain voltage. Experimental results and band diagram studies prove that the photoresponse properties of contact interfaces are tuned by small drain voltage. This study will be beneficial for understanding the effect of drain voltage on the heterostructures. (C) 2016 Elsevier B.V. All rights reserved.