▎ 摘　　要

The photogating effect has been previously utilized to realize ultra-high photoresponsivity in a semiconductor-graphene hybrid photodetector. However, the spectral response of the graphene hybrid photodetector was limited by the bandgap of the incorporated semiconductor, which partially compromised the broadband absorption of graphene. Here, we show that this limitation can be overcome in principle by harnessing the electron-accepting ability of the electrochemical half-reaction. In our new graphene phototransistor, the electrochemical half-reaction serves as an effective reversible electron reservoir to accept the photoexcited hot electron from graphene, which promotes the sub-bandgap photosensitivity in a silver chloride (AgCl)-graphene photodetector. The photoconductive gain of similar to 3 x 10(9) electrons per photon in the AgCl-graphene hybrid is favored by the long lifetime of photoexcited carriers in the chemically reversible redox couple of AgCl/Ag-0, enabling a significant visible light (400-600 nm) responsivity that is far beyond the band-edge absorption of AgCl. This work not only presents a new strategy to achieve an electrically tunable sub-bandgap photoresponse in semiconductor-graphene heterostructures but also provides opportunities for utilizing the electrochemical half reaction in other two-dimensional systems and optoelectronic devices.