• 文献标题:   Origin of anomalous electronic structures of epitaxial graphene on silicon carbide
  • 文献类型:   Article
  • 作  者:   KIM S, IHM J, CHOI HJ, SON YW
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Konkuk Univ
  • 被引频次:   284
  • DOI:   10.1103/PhysRevLett.100.176802
  • 出版年:   2008

▎ 摘  要

On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasiperiodic 6x6 domain pattern emerges out of a larger commensurate 6 root 3 x 6 root 3 root R30 degrees periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues in epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.