• 文献标题:   Dopant-configuration controlled carrier scattering in graphene
  • 文献类型:   Article
  • 作  者:   ANAND B, KARAKAYA M, PRAKASH G, SAI SSS, PHILIP R, AYALA P, SRIVASTAVA A, SOOD AK, RAO AM, PODILA R
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Clemson Univ
  • 被引频次:   13
  • DOI:   10.1039/c5ra05338b
  • 出版年:   2015

▎ 摘  要

Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).