• 文献标题:   Armchair Graphene Nanoribbon Gate-Controllable RTD With Boron Nitride Barriers
  • 文献类型:   Article
  • 作  者:   MONFARED MHG, HOSSEINI SE
  • 作者关键词:   armchair graphene, hexagonal boron nitride hbn, resonanttunneling diode rtd
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Ferdowsi Univ Mashhad
  • 被引频次:   0
  • DOI:   10.1109/TED.2020.3022347
  • 出版年:   2020

▎ 摘  要

Resonant-tunneling diodes (RTDs) based on graphene nanoribbons have attracted the attention of many researchers recently. In this article, we propose a new RTD based on graphene nanoribbon/h-boron nitride. In this structure, two hexagonal boron nitride (h-BN) slices are used as potential barriers to forma double-barrier structure, due to the higher bandgap of h-BN. Two gate electrodes are used in order to control the peak-to-valley current ratio (PVR). In the proposed structure, a PVR of 1.11 at a valley current of 5.56 mu A and a PVR of 2.41 at a valley current of 0.49 mu A have been obtained that are better than many reported structures in the literature. The proposed structure is a suitable candidate for use in various high current RTD-based applications. A numerical tight-binding model coupled with nonequilibrium Green's function formalism is used for simulation and studying electronic properties of this structure.