▎ 摘　　要

In this work, we present the fabrication and characterisation of graphene photodiodes and transfer length method structures. Graphene is grown using a thermal chemical vapor deposition process on copper foils and subsequently transferred onto silicon-dioxide/silicon substrate. Photodiodes are fabricated on both n-type silicon and p-type silicon are a comparison is shown. Photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon. Spectral response of graphene photodiodes is measured to be less than 0.2 mAW(-1) which is attributed to the light absorbance of 2.3% for single layer graphene. Transfer length method device structures are also fabricated and contact resistance is calculated and plotted as a function of spacing between the contacts. The calculated contact resistance (RcW) is 870 ohm.mu m. The latter structures are also characterised under various ambient conditions, before and after annealing. The value of contact resistance reduces from 870 ohm.mu m to 750 ohm.mu m after annealing. This reduction is attributed to the improvement in bonding between graphene and metal. Measurements under vacuum show increase in contact resistance which is attributed to the removal of adsorbed water molecules on the surface on graphene. The sheet resistivity of graphene is calculated to be between 1.17 k Omega/square and 3.67 k Omega/square.