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  • 文献标题:   Relatively low temperature deposition of graphene like films with ethane GCIB irradiation
  • 文献类型:   Article, Proceedings Paper
  • 作　　者:   NAKAYAMA D, BABA H, TOYODA N, YAMADA I
  • 作者关键词:   graphene, ethane gas cluster ion beam, low temperature deposition
  • 出版物名称:   SURFACE COATINGS TECHNOLOGY
  • ISSN:   0257-8972
  • 通讯作者地址:   Univ Hyogo
  • 被引频次:   0
  • DOI:   10.1016/j.surfcoat.2016.06.002
  • 出版年:   2016

▎ 摘　　要

Relatively low-temperature depositions of graphene like film on Ni substrate were studied using ethane gas cluster ion beam (GCIB). Ethane GCIBs realize shallow carbon implantation and create high temperature and high pressure conditions, which lead to reduction of substrate temperature. By optimization of deposition conditions, it was found that graphene like films were formed on Ni by 5 keV ethane GCIB irradiation at substrate temperature of 400 degrees C. (C) 2016 Elsevier B.V. All rights reserved.