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  • 文献标题:   Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene-Quantum Dot Transistor
  • 文献类型:   Article
  • 作　　者:   TURYANSKA L, MAKAROVSKY O, SVATEK SA, BETON PH, MELLOR CJ, PATANE A, EAVES L, THOMAS NR, FAY MW, MARSDEN AJ, WILSON NR
  • 作者关键词:  
  • 出版物名称:   ADVANCED ELECTRONIC MATERIALS
  • ISSN:   2199-160X
  • 通讯作者地址:   Univ Nottingham
  • 被引频次:   30
  • DOI:   10.1002/aelm.201500062
  • 出版年:   2015

▎ 摘　　要

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using short (<1 nm) capping ligands, the photoresponsivity of the graphene devices is enhanced up to 10(9) A W-1.