▎ 摘　　要

Copper (I) chloride (CuCl) modified graphene oxide with different copper (Cu) content were prepared by 'ion implantation' method using CuCl as Cu source. The samples were characterized by x-ray Powder Diffraction-XRD, FTIR, BET, SEM, TEM, EDS and x-ray photoelectron spectroscopy-XPS. From TEM images and EDS elemental mapping, it showed the CuCl particles of 30-50 nm with high dispersion on graphene oxide surface. From XPS result, it revealed the presence of both Cu(+)and Cu(2+)ions but Cu(+)ion amount was predominant. CO adsorption on CuCl modified graphene oxide with different Cu content was tested. Among tested CuCl modified GO samples, 2CuCl/GO sample exhibited the highest CO gas adsorption capacity of 2.9 mmol g(-1)at 20 degrees C which was 7.5 times higher than that of pristine GO (0.38 mmol g(-1)). High CO adsorption performance on CuCl modified GO can be explained by the formation of pi-complexation between CO molecules and Cu(I) ions. From CO adsorption on CuCl modified GO, it showed that the experimental data fit well with Langmuir- Freundlich model.