• 文献标题:   Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate
  • 文献类型:   Article
  • 作  者:   DRAGOMAN M, DINESCU A, DRAGOMAN D
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0148-6055 EI 1520-8516
  • 通讯作者地址:   Natl Inst Res Dev Microtechnol IMT
  • 被引频次:   7
  • DOI:   10.1063/1.4954639
  • 出版年:   2016

▎ 摘  要

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gates, with lengths of about 30 nm and separated by a distance of about 40 nm, are tilted at 45 degrees with respect to the source and drain electrodes, which are distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e., nonlinear drain voltage-drain current dependences with saturation regions and negative differential resistance at certain bias voltages. Tens of ballistic transistors with very large transconductances were fabricated on a chip cut from a 4 in. graphene wafer. Such double-gate transistor configurations can be used also as extremely efficient, state-of-the-art photodetectors. Published by AIP Publishing.