▎ 摘 要
We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gates, with lengths of about 30 nm and separated by a distance of about 40 nm, are tilted at 45 degrees with respect to the source and drain electrodes, which are distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e., nonlinear drain voltage-drain current dependences with saturation regions and negative differential resistance at certain bias voltages. Tens of ballistic transistors with very large transconductances were fabricated on a chip cut from a 4 in. graphene wafer. Such double-gate transistor configurations can be used also as extremely efficient, state-of-the-art photodetectors. Published by AIP Publishing.