• 文献标题:   Growth and Etching of Centimeter-Scale Self-Assembly Graphene-h-BN Super-Ordered Arrays: Implications for Integrated Electronic Devices
  • 文献类型:   Article
  • 作  者:   LI MH, SUN YJ, XUE X, LU XY, GUO ZL, HAN YD, DONG JC, GENG DC, LI L, YANG WS
  • 作者关键词:   graphene, etching, hbn, 2d heterostructure, cu catalyst, chemical vapor deposition
  • 出版物名称:   ACS APPLIED NANO MATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1021/acsanm.1c03516 EA JAN 2022
  • 出版年:   2022

▎ 摘  要

The highly integrated miniature electronic and photonic components have been extensively studied because they exhibit a significant potential in producing scaled circuits with high performance. Inspired by the spontaneous organization of molecular units into ordered structures, we demonstrate for the first time a controllable fabrication of super-ordered graphene-hexagonal boron nitride (h-BN) planar heterostructure arrays on a liquid Cu surface by a chemical vapor deposition method. The area of graphene and h-BN arrays can reach up to 1 cm(2) with a prominent uniformity in morphology and orientation. The size and density of the arrays can be precisely tailored by modulating the composition ratio of the CH4/H-2. The electrostatic force among the heterostructure units and the fluidity of the liquid metal surface are accounted for the formation of the super-ordered arrays. Moreover, selective etching of h-BN in the heterostructure is also achieved, offering a direct top-down approach for the construction of ordered 2D patterns. The construction and etching of large-scale super-ordered 2D heterostructure arrays paves the way toward scaled integrated devices.