• 文献标题:   Electronic structures of defects in bottom-up N-doped graphene nanoribbons: Experiment and theory
  • 文献类型:   Article
  • 作  者:   LI BJ, GAO L, ZHANG Y, RUAN ZL, ZHOU HJ, GENG JQ, CHEN L, LU JC, CAI JM
  • 作者关键词:   n doped graphene nanoribbon, defect, build\in electric field, concentration, first principles calculation
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.apsusc.2022.155874 EA DEC 2022
  • 出版年:   2023

▎ 摘  要

Graphene nanoribbons (GNRs) possess atomically tunable electronic structures via modulating the width, edge structures and various defects. Here, the electronic structures of three experimentally observed defects (substitutional site defect D-s, vacancy defect D-v and pentagon topological defect D-p) in N-9-AGNRs on the Au(1 1 1) substrate are systematically investigated. Scanning tunneling spectroscopy (STS) analysis reveals that Ds induces a subversive variation which results in metallic character, while the D-v and D-p reduce the band gap from 1.75 eV to 1.34/1.02 eV respectively. Further first-principles calculations reveal that the N-9-AGNR(Ds), N-9-AGNR(D-v), and N-9-AGNR(D-p) possess electrostatic potential differences of 0.55, 0.21 and-0.24 eV respectively, which drives the separation of electrons and holes. With the defect concentration increasing, the band gaps initially reduce and then increase for both N-9-AGNR(D-v) and N-9-AGNR(D-p). Moreover, the optical absorbances of the pristine N-9-AGNR, N-9-AGNR(D-v), and N-9-AGNR(D-p) in the infrared spectral region are similar to 6-8%, indicating that it is beneficial to be applied in infrared detectors, optoelectronic devices, biomedicine and other areas with high infrared radiation. Our findings can provide references for experimental researchers to extend the experimentally fabricated N-9-AGNRs in the future applications.