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  • 文献标题:   Tuning the Dirac Point in CVD-Grown Graphene through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole
  • 文献类型:   Article
  • 作　　者:   WEI P, LIU N, LEE HR, ADIJANTO E, CI LJ, NAAB BD, ZHONG JQ, PARK J, CHEN W, CUI Y, BAO ZA
  • 作者关键词:   cvd grown graphene, ntype doping, dirac point, solutionproces, transistor, inkjetprinting
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Stanford Univ
  • 被引频次:   100
  • DOI:   10.1021/nl303410g
  • 出版年:   2013

▎ 摘　　要

Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethy1-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices.