▎ 摘　　要

Graphene is the most promising contender for the future generation of electronic and photonic devices, based on its extraordinary properties. The effect of the metal interface with graphene, however, which completely alters its properties, is of great importance. The effects of the substrate supporting the graphene matrix, the graphene/metal contact resistance and the overall metal oxide semiconductor capacitors (MOSCAP) for possible CMOS circuitry have been thoroughly investigated in this research work. We have fabricated a structure with pertinent deposition techniques and performed a detailed electrical analysis to obtain the transport characteristics. Nickel (Ni) is chosen as the transition metal which makes the chemisorption bonding with graphene while qualifying as an interface. We present an analysis of the metal contacts, a study of the metal resistivity at various planes, a study of the graphene (carbon) atom's resistance at the atomistic scale, the graphene based MOSCAP leakages, the necessary charge accumulation at the metal-graphene interface and the charge inversion just beneath the oxide layer.