▎ 摘　　要

The present work was aimed to investigate the electric and dielectric behavior of synthesized graphene oxide as a function of both temperature ranging from the ambient to 873K and frequency varying between 10 Hz and 10 MHz. Graphene oxide nanosheets were prepared by the modified Hummer's Method. The structural and morphological properties were characterized by X-Ray diffraction, FTIR and Raman spectroscopies. The ac conductivity, dc conductivity, dielectric constant and loss factors were obtained. Constant phase elements allowed to obtain an equivalent electrical circuit by fitting the theoretical approximations to the experimental results. The synthesized graphene oxide (GO) exhibited high values of dielectric constant epsilon'(omega) and low losses. The obtained GO could be a good candidate for semiconductor compound and may be used in colossal memories. (C) 2020 Published by Elsevier B.V.