• 文献标题:   Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   PAN M, WANG C, LI HF, XIE N, WU P, WANG XD, ZENG ZL, DENG SG, DAI GP
  • 作者关键词:   graphene, ushaped, cvd
  • 出版物名称:   MATERIALS
  • ISSN:   1996-1944
  • 通讯作者地址:   Nanchang Univ
  • 被引频次:   0
  • DOI:   10.3390/ma12121887
  • 出版年:   2019

▎ 摘  要

U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate.