▎ 摘　　要

A near-infrared photodetector was deposited directly Ge on the graphene substrate by electron beam evapora-tion. The Ge annealed at 500 degrees C shows good crystal quality,and then PDMS/PMMA was used to transfer the heterojunction to the flexible substrate, and the spectra of the Raman Ge/graphene heterojunction were basically the same before and after the transfer, indicating that the Ge/graphene transfer was successful and showed very high performance in the near-infrared region absorption rate. In addition, the photoresponsivity of the device is about 0.073 A W-1 with Ilight/Idark ratio of 1.5 x 103 at zero bias.