▎ 摘　　要

With increasing demands of high-performance and functionality, electronics devices generate a great amount of heat. Thus, efficient heat dissipation is crucially needed. Owing to its extremely good thermal conductivity, graphene is an interesting candidate for this purpose. In this paper, a two-step temperature-annealing process to fabricate ultrahigh thermal conductive graphene assembled films (GFs) is proposed. The thermal conductivity of the obtained GFs was as high as 3826 +/- 47 W m(-1) K-1. Extending the time of high-temperature annealing significantly improved the thermal performance of the GF. Structural analyses confirmed that the high thermal conductivity is caused by the large grain size, defect-free stacking, and high flatness, which are beneficial for phonon transmission in the carbon lattice. The turbostratic stacking degree decreased with increasing heat treatment time. However, the increase in the grain size after long heat treatment had a more pronounced effect on the phonon transfer of the GF than that of turbostratic stacking. The developed GFs show great potential for efficient thermal management in electronics devices.