▎ 摘　　要

The fabrication of patterned graphene electronics at high resolution is an important challenge for many applications in microelectronics. Here, we demonstrate the conversion of positive photoresist (PR), commonly employed in the commercial manufacture of consumer electronics, into laser-induced graphene (LIG). Sequential lasing converts the PR photopolymer first into amorphous carbon, then to photoresist-derived LIG (PR-LIG). The resulting material possesses good conductivity and is easily doped with metal or other additives for additional functionality. Furthermore, photolithographic exposure of PR prior to lasing enables the generation of PR-LIG patterns small enough to be invisible to the naked eye. By exploiting PR as a photopatternable LIG precursor, PR-LIG can be synthesized with a spatial resolution of similar to 10 mu m, up to 15 times smaller than conventional LIG patterning methods. The patterning of these small PR-LIG features could offer a powerful and broadly accessible strategy for the fabrication of microscale LIG-derived nanocomposites for on-chip devices.