• 文献标题:   Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation
  • 文献类型:   Article
  • 作  者:   RIGOSI AF, LIU CI, WU BY, LEE HY, KRUSKOPF M, YANG YF, HILL HM, HU JN, BITTLE EG, OBRZUT J, WALKER ARH, ELMQUIST RE, NEWELL DB
  • 作者关键词:   epitaxial graphene, quantum hall effect, transport mobility, surface conductivity, parylene
  • 出版物名称:   MICROELECTRONIC ENGINEERING
  • ISSN:   0167-9317 EI 1873-5568
  • 通讯作者地址:   NIST
  • 被引频次:   8
  • DOI:   10.1016/j.mee.2018.03.004
  • 出版年:   2018

▎ 摘  要

Homogeneous, single-crystal, monolayer epitaxial graphene (EG) is the one of most promising candidates for the advancement of quantized Hall resistance (QHR) standards. A remaining challenge for the electrical characterization of EG-based quantum Hall devices as a useful tool for metrology is that they are electrically unstable when exposed to air due to the adsorption of and interaction with atmospheric molecular dopants. The resulting changes in the charge carrier density become apparent by variations in the surface conductivity, the charge carrier mobility, and may result in a transition from n-type to p-type conductivity. This work evaluates the use of Parylene C and Parylene N as passivation layers for EG. Electronic transport of EG quantum Hall devices and non-contact microwave perturbation measurements of millimeter-sized areas of EG are both performed on bare and Parylene coated samples to test the efficacy of the passivation layers. The reported results, showing a significant improvement in passivation due to Parylene deposition, suggest a method for the mass production of millimeter-scale graphene devices with stable electrical properties.