• 文献标题:   Growth of nitrogen-doped graphene on copper: Multiscale simulations
  • 文献类型:   Article
  • 作  者:   GAILLARD P, SCHOENHALZ AL, MOSKOVKIN P, LUCAS S, HENRARD L
  • 作者关键词:   graphene, ab initio, nitrogendoped, kinetic monte carlo
  • 出版物名称:   SURFACE SCIENCE
  • ISSN:   0039-6028 EI 1879-2758
  • 通讯作者地址:   Univ Namur
  • 被引频次:   1
  • DOI:   10.1016/j.susc.2015.08.038
  • 出版年:   2016

▎ 摘  要

We used multiscale simulations to model the growth of nitrogen-doped graphene on a copper substrate by chemical vapour deposition (CVD). Our simulations are based on ab-initio calculations of energy barriers for surface diffusion, which are complemented by larger scale Kinetic Monte Carlo (KMC) simulations. Our results indicate that the shape of grown doped graphene flakes depends on the temperature and deposition flux they are submitted during the process, but we found no significant effect of nitrogen doping on this shape. However, we show that nitrogen atoms have a preference for pyridine-like sites compared to graphite-like sites, as observed experimentally. (C) 2015 Elsevier B.V. All rights reserved.