▎ 摘　　要

Tetrafluorosilane (SiF4 or TFS), a novel precursor gas, has been demonstrated to perform three primary operations of silicon carbide-related processing: SiC etching, SiC epitaxial growth and graphene epitaxial growth. TFS etches SiC substrate vigorously in a H-2 ambient by efficient Si removal from the surface, where SiC etch rate is a function of TFS gas concentration. In this SiC etching process, Si is removed by TFS and C is removed by H-2. When propane is added to a H-2 and TFS gas mixture, etching is halted and high-quality SiC epitaxy takes place in a Si droplet-free condition. TFS's ability to remove Si can also be exploited to grow epitaxial graphene in a controllable manner in an inert (Ar) ambient. Here, TFS enhances graphene growth by selective etching of Si from the SiC surface.