▎ 摘　　要

Graphene ranks highly as a promising material for future nanoelectronic devices because of its exceptional electron-transport properties. It appears as a material of choice for high-frequency applications. We report the growth and structure of epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers using low-energy electron microscopy. Selective-area low-energy electron diffraction highlights the presence of two graphene domains, rotated by +/- 15 degrees with respect to the SiC lattice. Micro-Raman spectroscopy demonstrates the characteristic signature of few layer graphene on the SiC. X-ray photoemission spectroscopy evidences a sharp interface between graphene and 3C-SiC(100). It appears that epitaxial graphene layers obtained on 3C-SiC(100)/Si(100) have properties similar to those obtained using classical 6H or 4H-SiC substrates with the advantage of being compatible with the current Si processing technology.