▎ 摘　　要

Graphene possesses many remarkable properties and shows promise as the future material for building nanoelectronic devices. For many applications such as graphene-based field-effect transistors (GFET), it is essential to control or modulate the electronic properties by means of doping. Using spatially controlled plasma-assisted CF4 doping, the Dirac point shift of a GFET covered with a polycrystalline PS-P4VP block co-polymer (BCP) [poly(styrene-b-4-vinylpyridine)] having a cylindrical morphology can be controlled. By changing the chemical component of the microdomain (P4VP) and the major domain (PS) with the CF4 plasma technique, the doping effect is demonstrated. This work provides a methodology where the Dirac point can be controlled via the different sensitivities of the PS and P4VP components of the BCP subjected to plasma processing.