• 文献标题:   Graphene Based Non-Volatile Memory Devices
  • 文献类型:   Article
  • 作  者:   WANG XM, XIE WG, XU JB
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Chinese Univ Hong Kong
  • 被引频次:   52
  • DOI:   10.1002/adma.201306041
  • 出版年:   2014

▎ 摘  要

With the continuous advance of modern electronics, the demand for non-volatile memory cells rapidly grows. As a promising material for post-silicon electronic applications, graphene non-volatile memory cells have received renewed interest due to its outstanding electronic and other physical properties. This research news briefly summarizes the recent progress in this area. Appealing research activities and technical trends are highlighted. Afterwards, requirements and aims of future graphene non-volatile memory cells that may possibly influence their commercialization are also discussed.