• 文献标题:   Carrier Density and Electric Field Dependent Nonlinear Transport of Chemical Vapor Deposition Graphene
  • 文献类型:   Article
  • 作  者:   KHALIL HMW, KELEKCI O, NOH H
  • 作者关键词:  
  • 出版物名称:   CHINESE PHYSICS LETTERS
  • ISSN:   0256-307X EI 1741-3540
  • 通讯作者地址:   Sejong Univ
  • 被引频次:   2
  • DOI:   10.1088/0256-307X/30/3/037201
  • 出版年:   2013

▎ 摘  要

We report on the measurements of nonlinear current-voltage characteristics of graphene fabricated by chemical vapor deposition. The current-voltage characteristic is described by a power law with a superlinear dependence of the current on the voltage, and the nonlinearity depends on the carrier density and the excitation level. The nonlinearity is strongest at the Dirac point and becomes weaker as the carrier density increases. At the Dirac point, we also observe a crossover to a much stronger nonlinear transport when the electric field increases above 10(4) V/m.