▎ 摘　　要

Using the fully self-consistent non-equilibrium Green's function (NEGF) method combined with density functional theory, we investigate numerically the electronic transport property for pristine and doped crossed graphene nanoribbon (GNR) junctions. It is demonstrated that in the case of zigzag interfaces, the I-V characteristics of the junction with or without doping always show semiconducting behavior, which is different from that in the case of armchair interfaces [Zhou, Liao, Zhou, Chen, Zhou, Eur. Phys. J. B 76 (2010) 421]. Interestingly, negative differential resistance (NDR) behavior can be clearly observed in a certain bias region for nitrogen-doped shoulder crossed junction. A mechanism for the NOR behavior is suggested. (C) 2012 Elsevier B.V. All rights reserved.