• 文献标题:   Raman fingerprint of charged impurities in graphene
  • 文献类型:   Article
  • 作  者:   CASIRAGHI C, PISANA S, NOVOSELOV KS, GEIM AK, FERRARI AC
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Free Univ Berlin
  • 被引频次:   622
  • DOI:   10.1063/1.2818692
  • 出版年:   2007

▎ 摘  要

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage. This reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to similar to 10(13) cm(-2) are estimated from the G peak shift and width and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on a scale of less than 1 mu m. (c) 2007 American Institute of Physics.