▎ 摘　　要

Due to unique structural and electrical properties of graphene, it has attracted noteworthy attention. Among various synthetic approach methodes of graphene, the metal-assisted chemical vapor deposition (CVD) method is the most sensible method to produce graphene films of low-defect and large-scale. Until now, the CVD method using hydrocarbon sources of gas state has synthesized as the large-scale graphene; however, a high temperature above 1000 degrees C is required for such synthesis. In a recent study, monolayer graphene domains were obtained at a low temperature (300 degrees C) using liquid pyridine. However, graphene films were not synthesized and the graphene domains of high defects density were only synthesized. Herein, we report the first successful growth of low-defect and monolayer graphenes using liquid pyridine on a Cu foil by CVD method. The effects of the growth temperature, gas flow rate, gas flow ratio, and growth time on the synthesized graphene were also investigated. The micro-Raman analysis indicated that these reaction parameters affected the number of layers and the defect degree of the synthesized graphene.