▎ 摘　　要

We report here the gate-tunable dielectric properties (see abstract figure) induced by the substrate driven interactions (SDI) and the exchange field (M) due to the ferro-magnetic impurities in graphene monolayer on transition metal dichalcogenide heterostructure. The interactions involve sub- lattice-resolved, enhanced intrinsic spin-orbit couplings (SOC), the extrinsic Rashba spin-orbit coupling (RSOC), and the orbital gap related to the transfer of the electronic charge from graphene to the substrate. We obtain the gapped bands with a RSOC-dependent pseudo Zeeman field due to the interplay of SDI. This enables us to obtain an expression of the dielectric function in the finite doping case ignoring the spin-flip scattering events completely. We find that the stronger RSOC has foiling effect on the Thomas-Fermi screening length.This foiling effect, over a broad range of the exchange field values (0-1meV), is an indication of the domination of the Dyakonov-Perel mechanism in the system over the Elliot-Yafet spin relaxation mechanism.The zero of the dielectric function corresponds to the plasmon dispersion which yields the q(2/3) behavior, and not the well known q(1/2) behavior, in the long wavelength limit. We find that, in this limit, the acoustic plasmons emerge when the carrier density 1.0x10(17)m(-2). Contour plot showing the plasmon frequency in arbitrary unit as a function of the gate voltage (V-g) and the absolute value of dimensionless wave vector in the case of graphene on WSe2 at T approximate to 0K. The exchange field M=0. Plot and color-bar indicate the increase in plasmon frequency with increase in the absolute value of V-g at a given wave vector. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim