▎ 摘　　要

The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available grapheneon-SiO2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.