• 文献标题:   Influence of Disorder on Electron-Hole Pairing in Graphene Bilayer
  • 文献类型:   Article
  • 作  者:   EFIMKIN DK, KULBACHINSKII VA, LOZOVIK YE
  • 作者关键词:  
  • 出版物名称:   JETP LETTERS
  • ISSN:   0021-3640 EI 1090-6487
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   14
  • DOI:   10.1134/S0021364011040084
  • 出版年:   2011

▎ 摘  要

We consider disorder effect on electron-hole pairing in the system of two graphene monolayers separated by dielectric barrier. The influence of charged impurities on temperature of phase transition is studied. In spite of large values of mobility of charge carriers in graphene disorder can considerably reduce temperature of electron-hole condensation in weak-coupling regime. The quantum hydrodynamics of the system is considered and phase stiffness of electron-hole condensate and temperature of Berezinskii-Kosterlitz-Thouless transition to the superfluid state are calculated.