▎ 摘　　要

In this work, we have designed excellent performance GaN-based Schottky barrier diode (SBD) with a sandwich structure by inserting a graphene (Gr) interlayer. The electrical properties of Pt/Gr/GaN and Pt/GaN SBDs have been systematically investigated by the temperature-dependent current-voltage (I-V) and capacitance-voltage measurements in order to explore the effects of Gr on main diode parameters. At room temperature, the Pt/Gr/GaN SBD exhibited lower turn-on voltage (V-on), ideality factor (n), differential specific on-resistance (R-on), and higher Schottky barrier height (SBH), signifying enhanced device attributes. Furthermore, the ideality factor and SBH for the Pt/Gr/GaN SBD were found to be insensitive to temperature from the temperature-dependentI-Vanalysis. The results revealed a highly homogeneous Schottky barrier interface in the case of Pt/Gr/GaN SBD. This facile strategy opened a pathway to improve the performance of the nitride Schottky rectifiers.