• 文献标题:   Effective doping of single-layer graphene from underlying SiO2 substrates
  • 文献类型:   Article
  • 作  者:   SHI YM, DONG XC, CHEN P, WANG JL, LI LJ
  • 作者关键词:   carrier density, charge exchange, contact potential, doping, electronic structure, graphene, raman spectra, silicon compound, thin film
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Nanyang Technol Univ
  • 被引频次:   152
  • DOI:   10.1103/PhysRevB.79.115402
  • 出版年:   2009

▎ 摘  要

When a single-layer graphene (SLG) is on SiO2 substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO2 substrates.