• 文献标题:   Gate-Dependent Electronic Raman Scattering in Graphene
  • 文献类型:   Article
  • 作  者:   RICCARDI E, MEASSON MA, CAZAYOUS M, SACUTO A, GALLAIS Y
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Univ Paris 07
  • 被引频次:   9
  • DOI:   10.1103/PhysRevLett.116.066805
  • 出版年:   2016

▎ 摘  要

We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in full agreement with theoretical expectations for nonresonant Raman processes involving interband electron-hole excitations across the Dirac cone. We further show that the spectral dependence of the electronic Raman scattering signal can be simply described by the dynamical polarizability of graphene in the long wavelength limit. The possibility to directly observe Dirac fermion excitations in graphene opens the way to promising Raman investigations of electronic properties of graphene and other 2D crystals.