▎ 摘　　要

The Al-Zr-ZnO films was deposited on the surface of n-Si (111) by sol-gel method. The results showed that the average grain size of Al-Zr-ZnO films decreases due to ion doping concentration. Based on XPS analysis, the surface defect oxygen of Al-Zr-ZnO films decreases. As for grapheme/Al-Zr-ZnO Schottky contact, barrier height increased and ideality factor decreased with the increasing of Al ion or Zr ion doping, indicating that the rectifying characteristics of graphene/Al-Zr-ZnO Schottky contacts was enhanced due to ion co-doping. It can be explained that oxygen vacancies of Al-Zr-ZnO films decreases due to the ion doping and weakens Fermi level pinning.