1. 平台首页
  2. 国际论文信息
  • 文献标题:   Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences
  • 文献类型:   Article
  • 作　　者:   ILLARIONOV Y, SMITH A, VAZIRI S, OSTLING M, MUELLER T, LEMME M, GRASSER T
  • 作者关键词:   biastemperature instability bti, graphene fets gfets, hotcarrier degradation hcd, reliability
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Tech Univ Wien
  • 被引频次:   12
  • DOI:   10.1109/TED.2015.2480704
  • 出版年:   2015

▎ 摘　　要

We present a detailed analysis of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs) and compare those findings with the bias-temperature instability (BTI). Our results show that the HCD in GFETs is recoverable, similar to its BTI counterpart. Moreover, both the degradation mechanisms strongly interact. Particular attention is paid to the dynamics of HCD recovery, which can be well fitted with the capture/emission time (CET) map model and the universal relaxation function for some stress conditions, quite similar to the BTI in both GFETs and Si technologies. The main result of this paper is an extension of our systematic method for benchmarking new graphene technologies for the case of HCD.